Search Results - I. Yu. Lovshenko

The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT a...

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The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greatest influence is exerted by radiation effects cause...

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The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to the forming of a hot spot in the vicinity of...

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Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar transistor as apart of the IGBT structure, im...

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The development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems. The device-technological simulation of the characteristics of HEMT,...

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One of the factors causing the failure of spacecraft integrated circuits is exposure to heavy charged particles. The entry of heavy charged particles into electronic devices leads to the appearance of single event transients (short current pulses), which in analog microcircuits manifest themselves i...

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This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench-IGBT (SJ-IGBT), Deep Trench SJ-IGBT (DT-SJ-IGBT...

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Current-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct quantum description for studies requiring a large n...

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Uncooled bolometric type thermal detectors, combined into a matrix and placed into a focal plane array have the following characteristics: low cost, operation at room temperature, compatibility with the silicon CMOS technology, and high detecting performance; therefore recently it became a hot spot...

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The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-pr...

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A comparative analysis of the characteristics of the main types of bolometers is indicated in the article. The constructive solution of an uncooled thermal detector of the bolometric type, formed using the technology of microelectromechanical systems, is studied. By means of computer simulation in m...

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The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and pr...

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Determination of optical, mechanical and electrical characteristics is one of the decisive factors in the design of instrumentation structures of thermal uncooled bolometer-type detectors (microbolometers). The paper presents the results of optimization calculations by means of computer simulation o...

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The increased interest in utilizing uncooled thermal bolometer-type detectors (microbolometers) within the infrared or terahertz detection field is justified by their operational and technological characteristics, in particular: relatively low manufacturing cost, high detection efficiency, compatibi...

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