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    Resistive switching properties and mechanisms of La doped ZnO thin film memory cells

    Resistive switching properties and mechanisms of La doped ZnO thin film memory cells by Jiahao Zhang, Jianbo Yang, Xiang Luo, Yan Zhang, Honglong Zheng, Xianpei Ren, Qiwei Hu, Ping He, Gang Yan, Yuanping Liu, Rui Wen, Qiang Li

    Published 2025-06-01

    In this paper, the memory cells based on ZnO thin films with various La concentrations (x% La:ZnO, x = 0, 2, 4, 6) are fabricated using the sol-gel spin coating method. Systematic investigations reveal that La doping significantly enhances the memory window, operational stability, and forming voltag...

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