Search Results - Guo Runnan

  • Showing 1 - 2 results of 2
Refine Results
  1. 1
    A K-band gm-boost dual path noise-canceling LNA

    A K-band gm-boost dual path noise-canceling LNA by Wang Yingqi, Wang Jiawen, Kuai Yang, Guo Runnan, Tao Hongqi

    Published 2025-04-01

    To meet the demand for high-performance silicon-based low noise amplifier (LNA) with the development of communication systems, a gm-boost dual path noise-canceling circuit topology is proposed, which can reduce transistor noise and achieve low noise figure (NF). A gm-boost structure is introduced in...

    Full description

    Get full text
    Article

    Save to List
    Saved in:
  2. 2
    19~21 GHz GaAs high linearity power amplifier MMIC

    19~21 GHz GaAs high linearity power amplifier MMIC by Liu Xiaoyu, Han Chenghao, Ruan Wenwu, Guo Runnan, Liu Ling, Xu Xindong, Hou Zewen, Zhuang Yuan, Yu Xuming, Tao Hongqi

    Published 2025-04-01

    Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper. In the scenario of signal transmission with high peak-to average power ratio（PAPR）,the efficiency and linearity of power amplifier（PA）have...

    Full description

    Get full text
    Article

    Save to List
    Saved in:

Search Tools: