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    Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure

    Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure by Zengyao Ren, Mengxi Wang, Pengfei Liu, Qi Liu, Kaiyou Wang, Gehard Jakob, Jikun Chen, Kangkang Meng, Xiaoguang Xu, Jun Miao, Yong Jiang

    Published 2020-06-01
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