Risultati della ricerca - Dunjun Chen
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Al <sub>0.4</sub>Ga <sub>0.6</sub>N/Al <sub>0.15</sub>Ga <sub>0.85</sub>N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes With a One-Dimensional Photonic C...
Pubblicazione 2016-01-01TestoAn Al <sub>0.15</sub>Ga <sub>0.85</sub>N/Al <sub>0.4</sub>Ga <sub>0.6</sub>N separate absorption and multiplication avalanche photodiode (APD) integrated with the 1-D photonic crystal (PC) filter with a three-period antireflection coating between the a...
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Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
Pubblicazione 2020-01-01TestoIn this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In<sub>0.05</sub>Ga<sub>0.95</sub>N...
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High Performance Wide Angle DBR Design for Optoelectronic Devices
Pubblicazione 2021-01-01TestoTo improve the performance of optoelectronic devices, a high performance wide angle SiO<sub>2</sub>/Ti<sub>3</sub>O<sub>5</sub> Distributed Bragg Reflector (DBR) mirror was designed and fabricated on double polished sapphire substrate. 17-pairs gradually varied DB...
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An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes
Pubblicazione 2017-01-01TestoTo enhance the impact ionization coefficient of holes, we proposed an improved solar-blind AlGaN avalanche photodiode (APD) structure by using a low-Al-composition AlGaN multiplication layer and a filter based on periodic photonic crystal together with a composition graded interlayer between separat...
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AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
Pubblicazione 2016-01-01TestoThe characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-ve...
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4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High UV Detection Efficiency
Pubblicazione 2016-01-01TestoIn this paper, a high-performance 4H-SiC separated absorption charge multiplication ultraviolet avalanche photodiode (APD) with low breakdown voltage is designed and fabricated. The room temperature dark current of the APD remains at ∼0.1 pA level (<inline-formula><tex-math notat...
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Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes
Pubblicazione 2017-01-01TestoTo enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by replacing the conventional AlGaN homogeneous multiplication region with a high/low Al content AlGaN heterostructure layer. The calculated results showe...
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4H-SiC Ultraviolet Avalanche Photodiodes With Small Gain Slope and Enhanced Fill Factor
Pubblicazione 2017-01-01TestoIn this paper, 4H-SiC separated absorption charge and multiplication ultraviolet avalanche photodiodes (APDs) with small gain-voltage slope and enhanced fill factor are designed and fabricated. As a special reach-through structure, the absorption layer of the APD is fully depleted at breakdown volta...
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Crosstalk Analysis of SiC Ultraviolet Single Photon Avalanche Photodiode Arrays
Pubblicazione 2019-01-01TestoOptical crosstalk is one of major problems limiting the performance of focal plane arrays based on single photon avalanche diodes (SPADs). In this work, for the first time the crosstalk characteristics of a 4H-SiC SPAD linear array are studied, which is based on a real-time dual channel data acquisi...
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A High-Performance SiO<sub>2</sub>/SiN<italic><sub>x</sub></italic> 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors
Pubblicazione 2019-01-01TestoTo improve the solar-blind/visible-blind photocurrent response rejection ratio of solar-blind photodetectors, we designed and fabricated a high-performance SiO<sub>2</sub>/SiN<sub>x</sub> 1-D photonic crystal (PC) ultraviolet (UV) filter on (0 ...
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Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling
Pubblicazione 2019-01-01TestoBack-illuminated Al<sub>0.1</sub>Ga<sub>0.9</sub>N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device...
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Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions
Pubblicazione 2025-06-01TestoSlight changes in potassium levels can affect health. Therefore, rapid, reliable, and quantitative determination of potassium ion content is important for medical diagnosis. AlGaN, as a semiconductor material with good biocompatibility, has many advantages in the development of new potassium ion sen...
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4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode
Pubblicazione 2017-01-01TestoIn this study, a 50-pixel linear array of 4H–SiC ultraviolet avalanche photodiodes operating in Geiger mode is reported for the first time. The 50 pixels within the linear array are all capable of detecting single photons but with a small number of them suffering from extra leakage curren...
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Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures
Pubblicazione 2018-01-01TestoHybrid white light emitting diodes (LEDs) have been developed utilizing micro-LEDs radiatively pumping down-conversion phosphor materials. The cyan InGaN/GaN multiple quantum wells LEDs with 95 μm in square are fabricated into 4 × 4 pixels as one unit in 4 in wafer b...
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