Search Results - Debdeep Jena

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  1. 1
    MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation

    MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation by Reet Chaudhuri, Kyle Bothe, Antonio Lucero, Austin Hickman, Shankar Miller-Murthy, Debdeep Jena, Huili Grace Xing, Ko-Tao Lee

    Published 2025-01-01

    This work presents aluminum nitride (AlN)/gallium nitride (GaN)/AlN high electron mobility transistors (HEMTs) on 100 mm silicon carbide (SiC) fabricated using a commercial 150 nm RF GaN foundry process. High electrical performance uniformity across the wafer surface is demonstrated. The thin 3 nm A...

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  2. 2
    Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 by removing surface carbon

    Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 by removing surface carbon by Naomi Pieczulewski, Kathleen T. Smith, Corey M. Efaw, Arjan Singh, Cameron A. Gorsak, Joshua T. Buontempo, Jesse Wensel, Kathy Azizie, Katie Gann, Michael O. Thompson, Darrell G. Schlom, Farhan Rana, Hari P. Nair, Steven M. Hues, Elton Graugnard, Paul H. Davis, Debdeep Jena, Huili Grace Xing, David A. Muller

    Published 2025-06-01

    Preserving a contamination-free metal–semiconductor interface in β-Ga2O3 is critical to achieve consistently low resistance (< 1 Ω-mm) ohmic contacts. Here, we report a scanning transmission electron microscopy study on the variation in Ti/Au ohmic contact quality to (010) β-Ga2O3 in a convention...

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