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    Fabrication and Characterization of Si Substrate-Free InGaN Light-Emitting Diodes and Their Application in Visible Light Communications

    Fabrication and Characterization of Si Substrate-Free InGaN Light-Emitting Diodes and Their Application in Visible Light Communications by Chia-Lung Tsai, Ying-Chang Li, Yi-Chen Lu, Sheng-Hsiung Chang

    Published 2017-01-01

    Visible light communications with InGaN-based light-emitting diodes (LEDs) grown on large-diameter (6-inch) and cost-effective Si (111) substrates are investigated experimentally. During epitaxial growth, the transition layers consisted of the step-graded AlGaN buffers incorporated with three low-te...

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