Search Results - Changqing Chen
-
1
Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure
Published 2019-01-01Get full textAlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) grown on <italic>c</italic>-plane substrates. In this paper, we propose a novel DUV LED structure embedded...
Article -
2
Improved the AlGaN-Based Ultraviolet LEDs Performance With Super-Lattice Structure Last Barrier
Published 2018-01-01Get full textIn this paper, a structure of super-lattice structure last barrier (SLSLB) is proposed, which can be applied into the AlGaN-based ultraviolet light-emitting diodes (LEDs) for improving the injection of both electrons and holes. Several other SLSLBs are also designed and compared in this work, and ac...
Article -
3
Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle
Published 2018-01-01Get full textIn this work, we propose and optimize the sidewalls for the mesa to enhance the optical power for AlGaN-based deep ultraviolet light-emitting diodes (LEDs). We obtain the mesa with the inclined sidewalls by conducting dry etching. The optical performance for LED devices with different inclination an...
Article -
4
III-Nitride Deep UV LED Without Electron Blocking Layer
Published 2019-01-01Get full textAlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as epitaxial complexity. As a result, wall plug efficien...
Article