Search Results - Bryan Melanson

Gallium Nitride (GaN) based light-emitting diodes (LEDs) suffer from the persistent issue of high resistivity of the p-type layer, due to inefficient dopant activation at room temperature. Here, a novel Electrostatic Field Effect LED (EFELED) is demonstrated to solve this issue by introducing signif...

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Modern multi-color RGB micro-light emitting diode (μLED) displays and digital micro-mirror laser projectors often require the use of both III-V and III-Nitride material systems for different pixel/laser colors. This is due primarily to the conventionally low efficiencies of red...

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The potential of ultraviolet (UV) AlGaN quantum well (QW) light-emitting diodes (LEDs) is stunted due to the lack of efficient p-type doping for this ultra wide bandgap material. In this work, a novel device - UV electrostatic field effect LED (EFELED) is demonstrated to address this issue by signif...

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Micro-Light-Emitting Diode (μLED) displays are of increasing interest in applications which require extremely high resolutions such as virtual and alternate reality headsets. Most modern full-color μLED displays rely on red, green, and blue (RGB) pixels based on different mater...

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Presents corrections to the article “Demonstration of Trench Isolated Monolithic GaN µLED Displays Enabled by Photoresist Planarization”.

Gallium Nitride (GaN) based light-emitting diodes (LEDs) are being utilized in an ever expanding number of applications. The persistent issues, however, have been the use of alternating current (AC) to direct current (DC) converters and the inefficient p-type doping compared to n-type doping. Here,...

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