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    MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation

    MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation by Reet Chaudhuri, Kyle Bothe, Antonio Lucero, Austin Hickman, Shankar Miller-Murthy, Debdeep Jena, Huili Grace Xing, Ko-Tao Lee

    Published 2025-01-01
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